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Search for "SiC nanowires" in Full Text gives 2 result(s) in Beilstein Journal of Nanotechnology.
ZnO-decorated SiC@C hybrids with strong electromagnetic absorption
Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47
- of SiC nanomaterials through surface carbonization of SiC nanowires and hydrolysis. SiC@C-ZnO composites were synthesized with different dosages of ZnNO3·6H2O. Composition, microstructure, and electromagnetic properties of the composites were characterized and analyzed. Results from TEM and XRD show
- mm). The excellent properties of the materials suggest great prospect as electromagnetic absorbers. Keywords: carbon; dielectric; electromagnetic absorption; SiC nanowires; ZnO; Introduction With increasing functionality of electronic devices, the widening of the working frequency bands, and the
- ]. Nevertheless, the EM absorption of most SiC-based absorbers with heterostructures is far from satisfactory [21][22][23]. In our previous work, SiC@C nanowires have been successfully obtained by surface carbonization of SiC nanowires [24]. Carbon materials are prone to bond with other dielectric or magnetic
Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions
Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29
- properties, despite the relatively large discrepancy in the results, the correlation between the diameter of SiC 1D nanostructures (down to 18 nm) and their Young’s modulus was not found. The Young’s moduli of 18–140 nm diameter SiC nanowires were determined to be in the range of 275–750 GPa [138][139
- ], showing average value comparable with bulk values of 400–500 GPa [136]. Reported Q factors of electrically induced mechanical resonance of SiC nanowires varied from 3,500 to 160,000 [138]. SiC-based NEM switches fabricated by top-down approach have shown good durability. The approach involved electron
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